Micron, Intel move to 34nm Nand flash

Intel and Micron Technology are moving to mass production of their jointly developed Nand flash memory chips that use 34nm (nanometre) technology.

The companies said in a statement on Monday that they were "ahead of schedule" in the development of the memory chip, which is being built under a joint venture, IM Flash Technologies.

The 32Gb, multi-level cell, flash memory chips, smaller than a thumbnail, are manufactured on 300nm wafers. They are intended for use as high-density, solid-state storage in small devices such as digital cameras, personal music players and digital camcorders. A single 32Gb chip could hold up to 1,000 songs, or more than 2,000 high-resolution photos, according to Micron.

The chips should also find homes in "solid-state drives, dramatically increasing their current storage capacity", Micron and Intel said.

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The companies plan to begin sampling lower-density multi-level cell and single-level cell products using the 34nm process technology early next year.

On Tuesday, Micron also learnt that two units of Formosa Plastics Group in Taiwan, Nan Ya Plastics and Inotera, will lend the company a combined $285m (£187m), following their recent partnership in a joint venture.