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On-Chip MRAM As A High-Bandwidth, Low-Latency Replacement For DRAM Physical Memories
White Papers This paper evaluates a magneto-resistive memory (MRAM)-based hierarchy to address these future constraints. MRAM devices are nonvolatile, and have the potential to be faster than DRAM, denser than embedded DRAM, and can be integrated into the...
[March 30, 2005, 0:00]
Two-Level BEOL Processing For Rapid Iteration In MRAM Development
White Papers The implementation of Magnetic Random Access Memory (MRAM) hinges on complex magnetic film stacks and several critical steps in Back-End-Of-Line (BEOL) processing. Although intended for use in conjunction with silicon CMOS front-end device drivers...
[March 23, 2006, 23:00]
Rapid-Turnaround Characterization Methods For MRAM Development
White Papers Magnetic Random Access Memory (MRAM) technology, based on the use of Magnetic Tunnel Junctions (MTJs), holds the promise of improving on the capabilities of existing charge-based memories by offering the combination of nonvolatility, speed, and...
[March 23, 2006, 23:00]
Single-Domain Model For Toggle MRAM
White Papers An overview is presented of the use of a single-domain model for developing an understanding of the switching of two coupled magnetic free layers for toggle MRAM (Magnetic Random Access Memory). The model includes the effects of length, width...
[March 23, 2006, 23:00]
Design Considerations For MRAM
White Papers MRAM (Magnetic Random Access Memory) technology, based on the use of Magnetic Tunnel Junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance.
[July 30, 2007, 0:00]
Magnetic Memory Moves On
News Toshiba and NEC unveiled a paper this week that showed methods to cut down power consumption and size in cells of MRAM, a type of memory that may replace conventional computer memory (DRAM) and even flash memory.
[December 17, 2004, 9:45]
IBM And Infineon To Shake Up Memory Market?
News MRAM takes a compound similar to those used in hard drives and implants it on the same piece of silicon as a traditional chip. The two companies, which will announce the effort Thursday, hope to speed development of Magnetic Random Access Memory...
[December 7, 2000, 8:53]
IBM, Infineon Show Off Next-gen Memory Progress
News As a result, chipmakers have been tinkering with alternatives such as Ovonics Unified Memory, memory made out of the same material as CD discs; Silicon Nanocrystals, which replaces a solid layer inside chips with a crystal lattice; and MRAM.
[June 10, 2003, 7:38]
Magnetic Memory Set To Charge The Market
News While DRAM and SRAM use well-known techniques with silicon, MRAM adds much extra complexity with very precise application of new materials, while still needing the same basic silicon circuitry for interfacing and control.
[February 12, 2003, 8:16]
IBM Changes Directions In Magnetic Memory
News Previously, IBM had been working on a more conventional type of magnetic memory called MRAM. As you make that device smaller (MRAM), you need to increase the magnetic field, and to continue to write [data], it becomes impractical," said Bill...
[August 20, 2007, 9:45]
IBM Allies With Stanford For Spintronics
News Magnetic random access memory (MRAM) could become the next product where spintronics could be incorporated. Ideally, MRAM will be able to store a substantial amount of data, consume little energy, and operate at a much faster rate than conventional...
[April 26, 2004, 10:30]
Rupert Goodwins' Diary
Blog For MRAM to become a moneyspinner, Freescale has to find an application that it and it alone can do. There are a few — Flash's biggest problem is that it wears out after tens or hundreds of thousands of data writes, and MRAM is a lot more resistant...
[July 14, 2006, 19:15]
Motorola Tech Gets Flashy
News One of the more promising technologies being explored by AMD and Motorola is called MRAM (magnetic random access memory). Motorola has promised to deliver sample MRAM chips by the end of this year. Motorola later this month will detail some of its...
[February 7, 2003, 10:46]
Magnetic Memory Chips Come To Market
News On Monday, the Austin, Texas-based specialist in embedded semiconductors released its MR2A16A chip, which the company says is the first commercial MRAM, or Magnetoresistive Random Access Memory, device.
[July 11, 2006, 8:20]
IBM, Infineon Show Off Next-gen Memory Progress
Talkback I would like, and i'm sure your readers would agree, to read more about MRAM and NVEC. Thank you.
[February 29, 2004, 0:46]
Magnetic Memory Moves On
Talkback We have the "know-how" - magnetic RAM but no MRAM. Magnetic RAM has been made already in Russia. If you will have our "know-how" you'll make Magnetic RAM through maximum half past year - by Eugene, Moscow
[December 18, 2004, 20:49]
Simulations Of Magnetic Materials With MDGRAPE-2
White Papers Two research programs are highlighted, the simulation of a curved MRAM cell and the simulation of the write head in a computer disk drive. The use of accelerator hardware for micromagnetics simulations is described, along with some initial results.
[March 23, 2006, 23:00]
Intel Looks At Leap In Handheld Memory
News Still a horse race Meanwhile, MRAM offers faster read/write speeds -- below 10 nanoseconds -- and can endure almost unlimited write cycles. MRAM and PFRAM each offer faster performance in terms of read/write speeds, though they do so at a higher cost.
[July 12, 2001, 9:40]
New Spin On Transistor Heralds Chip Revolution
News IBM is investigating MRAM -- magnetic memory -- based on the technology, and Stanford University recently announced the discovery of an 'Ohm's Law' for spin. A fundamental breakthrough in solid-state physics has been announced this week by Swedish...
[September 24, 2003, 17:05]
IDF: New Memory Technologies On The Way
News MRAM is much more complex. Beyond this point, Intel is looking at a wide range of novel technologies, including Polymer Memory, Ovionics Unified Memory (OUM), Magnetoresistive RAM (MRAM) and ferro-electric RAM (FeRAM).
[February 27, 2002, 9:51]
