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Strained silicon speeds AMD's chips
News Advanced Micro Devices has begun to incorporate a form of strained silicon into its chips, in a design twist that will let the company increase the performance of its processors. The strained silicon is being incorporated into all of AMD's 90...
[August 20, 2004, 8:50]
'Strained silicon' to pump up chips
News Strained silicon -- which will appear in Intel's Prescott chip next year -- stretches the distances between the silicon atoms in transistors, the tiny on/off switches that form the basis of a chip. Researchers and design engineers from IBM and...
[December 6, 2002, 7:11]
IBM, AMD team up to strain silicon
News Called "Dual Stress Liners", or DSL, the technique will ideally eliminate much of the complexity involved with strained silicon. To date, most companies have strained silicon by inserting a layer of germanium below the transistors.
[December 13, 2004, 8:15]
IBM combination technique speeds PC chips
News The company has managed to combine both strained silicon and a silicon insulator into the same wafer. Strained silicon improves electron mobility, or the speed at which electrons can travel through silicon.
[September 9, 2003, 16:55]
AMD reveals futuristic transistor designs
News The company has also demonstrated a new strained silicon transistor based on a metal gate design. That technology has shown 20 percent to 25 percent better performance than conventional strained-silicon transistors, AMD said.
[April 3, 2003, 7:48]
Intel shows off next-generation production tricks
News The 65nm process also used strained silicon, a method of improving the conductivity and reducing the power loss in chips that was first used in the 90nm production process behind Intel’s Prescott next-generation Pentium chip.
[November 24, 2003, 20:25]
Intel set to overhaul Pentium 4 by 2005
News In the second half of 2003, the company will release "Prescott," a Pentium 4 variant that will feature a new security system and "strained silicon," a chipmaking method that speeds up transistors. In its 90-nanometre manufacturing, Intel will...
[October 9, 2002, 8:52]
IBM powers up 90-nanometre process
News To make the new PowerPCs, IBM is combining layers of silicon on insulator (SOI) and strained silicon. Strained silicon, by contrast, removes layers and ridges in silicon, which in turn allows electrons to move faster.
[February 13, 2004, 8:10]
AMD unveils triple-gate transistor
News Intel's Prescott chip, shipping to computer manufacturers later this year, will contain strained silicon, but Intel has yet to adopt silicon on insulator, which advocates say cuts down on leakage. By contrast, AMD and IBM are already selling chips...
[September 19, 2003, 11:20]
IBM unveils world's smallest transistor
News But one important feature of the new transistor is that it can be combined with "strained silicon," a manufacturing technique that promises to boost processor performance by up to 20 percent. As previously reported, IBM and other chipmakers...
[December 9, 2002, 8:05]
Intel to unveil nanotech plans
News Similarly, some Intel executives in 2001 questioned the need or functionality of strained silicon, a method of improving chip performance by spacing silicon atoms farther apart. In August, the company said strained silicon would be incorporated...
[September 4, 2002, 13:48]
AMD strains for processor improvements
News The chipmaker is examining how to incorporate a wide variety of cutting-edge concepts -- strained silicon, multi-gate transistors, replacing silicon with metal in key transistor components -- to boost the performance of chips that will hit the...
[June 12, 2003, 9:03]
Intel unveils new chip manufacturing technology
News The Santa Clara, California-based chipmaker will use "strained silicon" -- or silicon where the atoms in the chip's silicon base are spaced further apart than normal -- in its chips made on the 90-nanometre manufacturing process, according to Mark...
[August 13, 2002, 7:39]
Intel spices up silicon for ultrafast future
News Strained silicon can double that, but then we'll reach the limits. Strained silicon improves this by moving the atoms farther apart. Strained silicon was proposed in 1991, perfected in 2002 and in production in 2003.
[March 10, 2006, 14:15]
AMD plans to remain thorn in Intel's side
News IBM will discuss new transistor designs -- including its own take on a double gate transistor and its strained silicon manufacturing process -- and also show off new 3D circuit designs. AMD researchers will serve up details on those efforts at this...
[December 10, 2002, 9:37]
Moore's Law to roll on for another decade
News Designers are going to have to add technologies such as strained silicon to their chips and to redesign transistors to control energy consumption. Shrinking transistors is the principal mechanism for doubling the population on a piece of silicon.
[February 11, 2003, 7:59]
Sun says new chip doubles speed
News The 90-nanometre manufacturing process will use a technology called strained silicon to wring more speed out of the chips, England said. UltraSparc IV packs two UltraSparc III processor cores onto a single slice of silicon.
[October 13, 2003, 8:40]
Will Intel smash the silicon barrier?
News The public roadmap for Intel’s core transistor design goes to 2011, where 22nm devices built on strained silicon with metal electrodes and high-K dielectrics. The tube can be between 1nm and 25nm across, and can be used to form part of a transistor...
[March 1, 2005, 16:10]
Intel chips to go their own way
News Additionally, they will contain "strained silicon," a layer of silicon germanium for extra performance. Like STMicroelectronics, Intel has designed a silicon chip that can be used to test DNA samples from bodily fluids, the same sort of thing that...
[February 18, 2003, 13:22]
IBM reaches chip milestone
News Such tricks will include the more extensive use of new materials, the adoption of manufacturing techniques such as Silicon on Insulator and strained silicon, and more exotic measures like the creation of multigate transistors.
[December 16, 2002, 7:31]
