Intel Puts Tri-Gate Transistor On Fast Track
News Intel says that its Tri-Gate transistor, a futuristic device that will let electricity flow more freely inside chips, is moving closer to reality. The Tri-Gate transistor, one of the tools that may let Intel continue to follow Moore's Law in the...
[June 11, 2003, 7:54]
Intel Unfurls Experimental 3D Transistors
News At a presentation in Japan this week, the chipmaker plans to unveil more technical details behind its Tri-Gate transistor, an experimental circuit that could become a crucial element in the company's efforts to continue to follow Moore's Law by...
[September 17, 2002, 8:21]
Intel Finalises Design Of Penryn Chip
News Bohr, however, did say that 45nm chips will not come with tri-gate transistors. The company has said in the past that it may change the materials in the transistor gate and the gate oxide — a major undertaking — to stem power leakage.
[November 30, 2006, 8:43]
Moore's Law On Course For Another Two Years
News The company in the past has said tri-gate transistors and new types of gates could be included. Many, for instance, are likely to include metal or other materials in the silicon gates and gate oxide, two structures inside transistors.
[January 26, 2006, 9:15]
IDF: Where No Chip Has Gone Before
News The company confirmed, for instance, that it is working on a multiple-gate transistor, called the Tri-Gate transistor, that will, if eventually incorporated into commercially released chips, increase the amount of electricity, and hence the...
[September 13, 2002, 7:46]
IBM Bakes 3D Circuit Design
News Intel's experimental Tri-Gate transistor uses a 3D design, stacking its three gates--tiny pathways for electricity--on top of one another. IBM says building better microchips is kind of like baking a cake.
[November 12, 2002, 8:03]
Will Intel Smash The Silicon Barrier?
News Intel has plenty of exotica up its sleeve for progress past this point: tri-gate transistors, where the control input of the device is no longer a simple layer on top but is wrapped around three sides of the transistor.
[March 1, 2005, 16:10]
